Drift mobility of carriers in porous silicon
N. S. AverkievIoffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnichiskaya ul. 26, St. Petersburg, 194021, RussiaL. P. KazakovaIoffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnichiskaya ul. 26, St. Petersburg, 194021, RussiaÉ. A. LebedevIoffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnichiskaya ul. 26, St. Petersburg, 194021, RussiaNatalia SmirnovaIoffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnichiskaya ul. 26, St. Petersburg, 194021, Russia
ABI
Аннотация
The drift mobility of carriers in porous silicon has been studied in a wide temperature range (190–360 K) at electric field strengths of 2×103–3×104 V/cm. An exponential temperature dependence of the hole drift mobility with an activation energy of d ∼ 0.14 eV was established. The density of localized states controlling the transport is evaluated.
Перевод пока недоступен