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Semiconductors

Работ: 118

Журнал · ISSN 1063-7826

  1. Epitaxial deposition of InGaAsP solid solutions in the miscibility gap

    L. S. Vavilova, V. A. Kapitonov, A. V. Murashova +1

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2000Цитирований: 0
    ABI

  2. Excess tunneling currents in p-Si-n-3C-SiC heterostructures

    Smagul Karazhanov, I. G. Atabaev, Timur Saliev +2

    СтатьяSilicon Carbide Semiconductor TechnologiesSemiconductors2001Цитирований: 0
    ABI

  3. Resonance tunneling of X-electrons in AlAs/GaAs(111) structures: Pseudopotential calculations and models

    G. F. Karavaev, В. Н. Чернышов

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2001Цитирований: 0
    ABI

  4. Nonlinear and dynamic properties of charge transport in polycrystalline silicon under optical illumination

    K. M. Doshchanov

    СтатьяThin-Film Transistor TechnologiesSemiconductors2001Цитирований: 0
    ABI

  5. Effect of doping with nitrogen on electrical properties and erbium electroluminescence of a-Si:H(Er) films

    O. I. Kon’kov, E. I. Terukov, L. S. Granitsyna

    СтатьяThin-Film Transistor TechnologiesSemiconductors2001Цитирований: 0
    ABI

  6. On the stabilization of electrical properties of compensated silicon as a result of irradiation with 60Co gamma-ray quanta

    Marat S. Yunusov, M. Kаrimov, M. A. Dzhalelov

    СтатьяSilicon and Solar Cell TechnologiesSemiconductors2001Цитирований: 0
    ABI

  7. The effect of external factors on photoelectric parameters of amorphous hydrogenated silicon in relation to the initial characteristics of the films

    Н. Р. Рахимов, U. S. Babakhodzhaev, Kh. Yu. Mavlyanov +1

    СтатьяSurface Roughness and Optical MeasurementsSemiconductors2001Цитирований: 0
    ABI

  8. Rapid thermal annealing of gallium arsenide implanted with sulfur ions

    V. M. Ardyshev, M. V. Ardyshev

    СтатьяSemiconductor materials and interfacesSemiconductors2002Цитирований: 0
    ABI

  9. Synthesis of new carbon-nitrogen nanoclusters by annealing diamond-like carbon films in nitrogen

    I. A. Faĭzrakhmanov, В. В. Базаров, N. V. Kurbatova +2

    СтатьяDiamond and Carbon-based Materials ResearchSemiconductors2003Цитирований: 0
    ABI

  10. Study of photocapacitance in diodes fabricated from silicon doped with vanadium

    Kh. T. Igamberdiev, A. T. Mamadalimov, Р. А. Муминов +2

    СтатьяSemiconductor materials and interfacesSemiconductors2003Цитирований: 0
    ABI

  11. Diffusion of ytterbium in silicon

    D. É. Nazyrov

    СтатьяGraphite, nuclear technology, radiation studiesSemiconductors2003Цитирований: 0
    ABI

  12. Local symmetry of the Pb1−xSnxSe lattice near the zero-gap state

    É. S. Khuzhakulov

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2004Цитирований: 0
    ABI

  13. The electrical and optical properties of InAs irradiated with electrons (∼2 MeV): The energy structure of intrinsic point defects

    V. N. Brudnyı̆, S. N. Grinyaev, N. G. Kolin

    СтатьяAdvanced Semiconductor Detectors and MaterialsSemiconductors2005Цитирований: 0
    ABI

  14. Electron exchange between neutral and ionized germanium centers in PbSe

    E. I. Terukov, É. S. Khuzhakulov

    СтатьяSemiconductor materials and interfacesSemiconductors2005Цитирований: 0
    ABI

  15. Mössbauer study of the Ge two-electron donor centers in PbSe

    Е. И. Теруков, E. S. Khuzhakulov

    СтатьяSemiconductor materials and interfacesSemiconductors2005Цитирований: 0
    ABI

  16. Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese

    М. К. Бахадырханов, О. Э. Саттаров, Х. М. Илиев +2

    СтатьяSemiconductor materials and interfacesSemiconductors2005Цитирований: 0
    ABI

  17. Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2006Цитирований: 0
    ABI

  18. Diffusion of yittrium in silicon

    D. É. Nazyrov, Muratali Bazarbaev, A. A. Iminov

    СтатьяSilicon and Solar Cell TechnologiesSemiconductors2006Цитирований: 0
    ABI

  19. Diffusion of terbium in silicon

    D. É. Nazyrov

    СтатьяGraphite, nuclear technology, radiation studiesSemiconductors2006Цитирований: 0
    ABI

  20. Scattering of holes by the GaAs/AlAs (111) and (110) interfaces

    G. F. Karavaev, В. Н. Чернышов

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2006Цитирований: 0
    ABI

  21. Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area

    И. Н. Арсентьев, A. V. Bobyl, O. Yu. Borkovskaya +7

    Статьяsolar cell performance optimizationSemiconductors2006Цитирований: 0
    ABI

  22. A Mössbauer study of Eu donor centers in PbS

    É. S. Khuzhakulov

    СтатьяAdvanced Condensed Matter PhysicsSemiconductors2006Цитирований: 0
    ABI

  23. Dynamics of the defects recharging in coarse-grained p-CdTe films

    Kh. Kh. Ismailov, Zh. Zhanabergenov, Ш. А. Мирсагатов +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsSemiconductors2006Цитирований: 0
    ABI

  24. Nonlinear effects in spin relaxation of cavity polaritons

    D. D. Solnyshkov, I. A. Shelykh, M. M. Glazov +5

    СтатьяStrong Light-Matter InteractionsSemiconductors2007Цитирований: 0
    ABI

  25. Intensification of electroluminescence of ZnSe:(Te, O) crystals as a result of irradiation with γ-ray photons

    D. B. Él’murotova, Э. М. Ибрагимова

    СтатьяTerahertz technology and applicationsSemiconductors2007Цитирований: 0
    ABI