L. S. Granitsyna

Работ: 1

Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politeknicheskaya ul. 26, St. Petersburg, 194021, Russia

1. Effect of doping with nitrogen on electrical properties and erbium electroluminescence of a-Si:H(Er) films

   O. I. Kon’kov, E. I. Terukov, L. S. Granitsyna

   СтатьяThin-Film Transistor TechnologiesSemiconductors2001Цитирований: 0

   ABIABI:AkademIndex/openalex/2001.article.000249