Effect of doping with nitrogen on electrical properties and erbium electroluminescence of a-Si:H(Er) films
Аннотация
The effect of nitrogen doping on the electrical and electroluminescence properties of amorphous hydrogenated silicon films doped with erbium has been studied. The parameters of the material, the characteristics of structures on its base, and the efficiency of Er electroluminescence (λ=1.54 µm) are determined by the excess of the nitrogen doping level over the background value depending on the Er concentration. It is shown that effectively luminescing structures can be obtained by reducing the background concentration, with nitrogen doping remaining at the level of ∼1021 cm−3. A possible mechanism is proposed, accounting for this effect in terms of two possible forms of nitrogen incorporation into an Er-doped a-Si:H structure: with either an Er-N complex or a Na 4 + -Si 3 − charged defect pair formed. In this case, the electroluminescence efficiency is determined by the number of these pairs.