V. M. Ardyshev

Работ: 1

Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, pl. Revolyutsii 1, Tomsk, 634050, Russia

1. Rapid thermal annealing of gallium arsenide implanted with sulfur ions

   V. M. Ardyshev, M. V. Ardyshev

   СтатьяSemiconductor materials and interfacesSemiconductors2002Цитирований: 0

   ABIABI:AkademIndex/openalex/2002.article.000046