Статья

Dynamics of the defects recharging in coarse-grained p-CdTe films

Kh. Kh. IsmailovPhysicotechnical Institute, Tashkent, 700084, UzbekistanZh. ZhanabergenovPhysicotechnical Institute, Tashkent, 700084, UzbekistanШ. А. МирсагатовPhysicotechnical Institute, Tashkent, 700084, UzbekistanSmagul KarazhanovPhysicotechnical Institute, Tashkent, 700084, Uzbekistan

Semiconductorsjournal2006en

ABI

Аннотация

The capacitance-voltage characteristic of the MOS-structure based on the coarse-grained p-CdTe film is studied. The nonmonotonici character of the characteristic is attributed to the recharging of deep acceptor levels at the semiconductor-oxide interface and by the variation in the degree of compensation of surface states.

Темы

Advanced Semiconductor Detectors and Materials Chalcogenide Semiconductor Thin Films Semiconductor materials and interfaces

Идентификаторы

DOI: 10.1134/s1063782606020138

Цитирования и источники

Цитирований: 0Использованных источников: 6

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