Semiconductors

Работ: 118

Журнал · ISSN 1063-7826

Optical confinement in laser diodes based on nitrides of Group III elements. Part 1: Theory and optical properties of materials
T. E. Slobodyan, K. A. Bulashevich, S. Yu. Karpov
СтатьяGaN-based semiconductor devices and materialsSemiconductors2008Цитирований: 0
ABI
Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface
A. A. Akopyan, Kh. N. Bachronov, O. Yu. Borkovskaya +5
Статьяsolar cell performance optimizationSemiconductors2009Цитирований: 0
ABI
Determination of the mechanisms of photovoltage generation in semiconductor films from spectral dependences of the absorption coefficient and photovoltage
G. A. Nabiyev
СтатьяThermography and Photoacoustic TechniquesSemiconductors2009Цитирований: 0
ABI
The quantum solution of the accumulation layer problem of n-InN
A. A. Klochikhin, I. Yu. Strashkova
СтатьяGaN-based semiconductor devices and materialsSemiconductors2009Цитирований: 0
ABI
Anisotropy of the relaxation of the electron spin caused by competition of the Rashba and Dresselhaus mechanisms
A. M. Smirnov, V. A. Oseptsova, А. В. Платонов +8
СтатьяQuantum and electron transport phenomenaSemiconductors2009Цитирований: 0
ABI
Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures
А. В. Новиков, Artem N. Yablonskiy, V. V. Platonov +3
СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2010Цитирований: 0
ABI
The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals
М. М. Мездрогина, E. Yu. Danilevskii, Roman Kuzmin +6
СтатьяZnO doping and propertiesSemiconductors2010Цитирований: 0
ABI
Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers
I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2
СтатьяSemiconductor materials and devicesSemiconductors2010Цитирований: 0
ABI
Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties
I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2
СтатьяSemiconductor materials and interfacesSemiconductors2010Цитирований: 0
ABI
Effect of the structural features of polycrystalline semiconductor films on the formation of anomalous photovoltage: II. Comparison with experiment
Sh. B. Atakulov, S. M. Zainolobidinova, G. A. Nabiev +1
СтатьяElectric Power Systems and ControlSemiconductors2012Цитирований: 0
ABI
Effect of the structural features of polycrystalline semiconductor films on the formation of anomalous photovoltage: I. Phenomenon mechanism
Sh. B. Atakulov, S. M. Zainolobidinova, G. A. Nabiev +1
СтатьяAdvanced Thermodynamics and Statistical MechanicsSemiconductors2012Цитирований: 0
ABI
Theory of transport phenomena in polycrystalline lead chalcogenide films. Mobility. Nondegenerate statistics
Sh. B. Atakulov, Sapura Zaynolobidinova, G. A. Nabiev +2
СтатьяPhase-change materials and chalcogenidesSemiconductors2013Цитирований: 0
ABI
Long-channel field-effect transistor with short-channel transistor properties
A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev
СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2014Цитирований: 0
ABI
Effect of neutron irradiation on the structure of silicon p-n junctions of voltage limiters
A. Z. Rakhmatov
СтатьяAdvancements in Semiconductor Devices and Circuit DesignSemiconductors2014Цитирований: 0
ABI
X-ray fluorescence analysis of Ge1–x Se x , As1–x Se x , and Ge1–x–y As y Se x glasses using electronic excitation
Е. И. Теруков, П. П. Серегин, А. В. Марченко +2
СтатьяX-ray Spectroscopy and Fluorescence AnalysisSemiconductors2015Цитирований: 0
ABI
On the surface photovoltaic effect in a multivalley semiconductor in an external magnetic field
Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov
СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2016Цитирований: 0
ABI
Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures
Т. Т. Muratov
СтатьяSilicon and Solar Cell TechnologiesSemiconductors2019Цитирований: 0
ABI
Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses
Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2
СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2022Цитирований: 0
ABI