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Semiconductors

Работ: 118

Журнал · ISSN 1063-7826

  1. Injection photodiode based on a p-Si-n-CdS-n +-CdS structure

    Ш. А. Мирсагатов, I. B. Sapayev

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2014Цитирований: 4
    ABI

  2. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

    СтатьяSemiconductor materials and interfacesSemiconductors2020Цитирований: 4
    ABI

  3. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    СтатьяSemiconductor materials and interfacesSemiconductors2018Цитирований: 4
    ABI

  4. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    СтатьяPhotonic and Optical DevicesSemiconductors2012Цитирований: 4
    ABI

  5. Some features of photocurrent generation in single- and multibarrier photodiode structures

    A. V. Karimov, D. M. Yodgorova

    СтатьяAdvanced Semiconductor Detectors and MaterialsSemiconductors2010Цитирований: 3
    ABI

  6. Features of the performance of a transient voltage suppressor in the pulsed mode

    A. Z. Rahmatov, O. A. Abdulkhaev, A. V. Karimov +1

    СтатьяPulsed Power Technology ApplicationsSemiconductors2013Цитирований: 3
    ABI

  7. Photoelectric properties of an injection photodetector based on alloys of II–VI compounds

    Ш. А. Мирсагатов, O. K. Ataboev, B. N. Zaveryukhin +1

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2014Цитирований: 3
    ABI

  8. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

    A. S. Gazizulina, Aslan Nasirov, A. A. Nebesniy +2

    СтатьяZnO doping and propertiesSemiconductors2021Цитирований: 3
    ABI

  9. Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures

    S. A. Muzafarova, Ш. А. Мирсагатов, F. N. Dzhamalov

    СтатьяAdvanced Semiconductor Detectors and MaterialsSemiconductors2009Цитирований: 3
    ABI

  10. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

    А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2015Цитирований: 3
    ABI

  11. Study of the intermediate layer at the n +-CdS/p-CdTe interface

    S. A. Muzafarova, B. U. Aĭtbaev, Ш. А. Мирсагатов +2

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2008Цитирований: 3
    ABI

  12. On the theory of the two-photon linear photovoltaic effect in n-GaP

    Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2016Цитирований: 3
    ABI

  13. Photoluminescence Properties of ZnO Nanorods Synthesized by Different Methods

    S. S. Kurbanov, Ш.З. Уролов, Z. Sh. Shaymardanov +2

    СтатьяZnO doping and propertiesSemiconductors2018Цитирований: 3
    ABI

  14. Dynamic strain-sensitive characteristics of the Schottky-barrier diodes under a pulsed uniform pressure

    О. О. Маматкаримов, С. З. Зайнабидинов, Azizbek Abduraimov +2

    СтатьяElectromagnetic Launch and Propulsion TechnologySemiconductors2000Цитирований: 2
    ABI

  15. Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy

    P. B. Parchinskiy, A. Yu. Bobylev, С. И. Власов +2

    СтатьяZnO doping and propertiesSemiconductors2007Цитирований: 2
    ABI

  16. Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au

    С. З. Зайнабидинов, I. G. Tursunov, О. Химматкулов

    СтатьяSemiconductor materials and interfacesSemiconductors2018Цитирований: 2
    ABI

  17. Effect of Uniaxial Elastic Deformation on the Current–Voltage Characteristic of Surface-Barrier Sb–p-Si〈Mn〉–Au Diodes

    О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov

    СтатьяSemiconductor materials and interfacesSemiconductors2020Цитирований: 2
    ABI

  18. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2020Цитирований: 2
    ABI

  19. Eddy currents in the p–n junction in a microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    СтатьяSurface and Thin Film PhenomenaSemiconductors2009Цитирований: 2
    ABI

  20. Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field

    M. G. Dadamirzayev

    СтатьяGyrotron and Vacuum Electronics ResearchSemiconductors2011Цитирований: 2
    ABI

  21. Size Quantization in n-GaP

    Rustam Yavkachovich Rasulov, P. Ya. Rasulov, I. Éshboltaev +1

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2020Цитирований: 2
    ABI

  22. Properties of precisely compensated semiconductors

    Smagul Karazhanov

    СтатьяSilicon and Solar Cell TechnologiesSemiconductors2000Цитирований: 1
    ABI

  23. Electrical properties of semiconductors with pair defects

    Smagul Karazhanov, É. V. Kanaki

    СтатьяSilicon and Solar Cell TechnologiesSemiconductors2000Цитирований: 1
    ABI

  24. Diffusion of europium in silicon

    D. É. Nazyrov

    СтатьяAdvanced Materials Characterization TechniquesSemiconductors2003Цитирований: 1
    ABI

  25. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    СтатьяGlass properties and applicationsSemiconductors2004Цитирований: 1
    ABI