B. U. Aĭtbaev

Работ: 5

Physicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2, Tashkent, 700084, Uzbekistan

1. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

   Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

   СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2009Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.200868

2. Study of the intermediate layer at the n +-CdS/p-CdTe interface

   S. A. Muzafarova, B. U. Aĭtbaev, Ш. А. Мирсагатов +2

   СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2008Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.393701

3. Degradation processes in photosensitive structures on the basis of big-blocked p-CdTe polycrystals

   Ш. А. Мирсагатов, A.I. Sultanov, Makhmudov +2

   СтатьяAdvanced Semiconductor Detectors and MaterialsUzbekiston Fizika Zhurnali2001Цитирований: 0

   ABIABI:AkademIndex/openalex/2001.article.000351

4. Functional possibilities of photo receivers with controllable spectrum

   Ш. А. Мирсагатов, B. U. Aĭtbaev, Makhmudov +1

   СтатьяInfrared Target Detection MethodologiesUzbekiston Fizika Zhurnali2001Цитирований: 0

   ABIABI:AkademIndex/openalex/2001.article.000352

5. Some peculiarities of current-voltage characteristics of nCdS-pCdTe-heterostructures with intermediate layer of d ≅ 1 μ m

   S. A. Muzafarova, Ш. А. Мирсагатов, A. Yu. Leĭderman +2

   СтатьяChalcogenide Semiconductor Thin FilmsUzbekiston Fizika Zhurnali2009Цитирований: 0

   ABIABI:AkademIndex/openalex/2009.article.000508