Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution
Ш. А. МирсагатовPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2, Tashkent, 700084, UzbekistanA. Yu. LeĭdermanPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2, Tashkent, 700084, UzbekistanB. U. AĭtbaevPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2, Tashkent, 700084, UzbekistanM. A. MakhmudovPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2, Tashkent, 700084, Uzbekistan
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Аннотация
This paper reports on the results of investigations of n-CdS-p-CdTe heterostructures with an extended layer of the intermediate solid solution which satisfies the ratio w/L ≈ 10 (where w is the base length and L is the diffusion length of minority charge carriers). The current-voltage characteristics of these structures over a wide range of voltages are adequately described by power relationships of the type J ≈ AV α, where the exponent α varies with an increase in the voltage. The results obtained are explained within the theory of drift mechanism of charge transfer with allowance made for the possibility of exchanging free charge carriers inside recombination complexes.
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