Study of the intermediate layer at the n +-CdS/p-CdTe interface
S. A. MuzafarovaPhysicotechnical Institute, NPO Fizika solntsa, Academy of Sciences of Republic Uzbekistan, Tashkent, 700084, UzbekistanB. U. AĭtbaevPhysicotechnical Institute, NPO Fizika solntsa, Academy of Sciences of Republic Uzbekistan, Tashkent, 700084, UzbekistanШ. А. МирсагатовPhysicotechnical Institute, NPO Fizika solntsa, Academy of Sciences of Republic Uzbekistan, Tashkent, 700084, UzbekistanK. DurshimbetovKarakalpak State University, Nukus, 708004, UzbekistanZh. ZhanabergenovKarakalpak State Pedagogical Institute, Nukus, 708004, Uzbekistan
ABI
Аннотация
The effect of production conditions and subsequent stimulation by ultrasonic irradiation on the formation of a solid solution at the n-CdS/p-CdTe interface in solar cells has been investigated. The phase composition of the solid-solution transient layer was investigated by a nondestructive photoelectric method (measurement of the spectral distribution of photosensitivity in the gate and photodiode modes). It is shown that the phase composition and thickness of the intermediate CdTe1−x S x layer depend strongly on the heterostructure formation conditions.
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