É. V. Kanaki

Работ: 2

Beruni Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan

1. Electrical properties of semiconductors with pair defects

   Smagul Karazhanov, É. V. Kanaki

   СтатьяSilicon and Solar Cell TechnologiesSemiconductors2000Цитирований: 1

   ABIABI:AkademIndex/openalex/2000.article.000183

2. Excess tunneling currents in p-Si-n-3C-SiC heterostructures

   Smagul Karazhanov, I. G. Atabaev, Timur Saliev +2

   СтатьяSilicon Carbide Semiconductor TechnologiesSemiconductors2001Цитирований: 0

   ABIABI:AkademIndex/openalex/2001.article.000090