Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

The degree of disordering and the thickness d of disordered layers and their effect on the band gap Eg of single-crystal Si(111) under Ar+-ion bombardment are studied for the first time. It is shown that the d value at ion energies of E0 = 1 and 2 keV is ~(100–120) and ~(150–160) Å, respectively. In this case, the density of states of electrons in the Si(111) valence band significantly changes, the light transmittance decreases to K = 55–60%, and the Eg value increases by ~10%. Under Ni+-ion bombardment, surface disordering is accompanied by a sharp change in the composition of the surface layers and, as a result, the K value decreases to 5–10%. After heating at T = 900 K, nanocrystals (at doses of D ≤ 1015 cm–2) and NiSi2 nanofilms (at D = 6 × 1016 cm–2) are formed.

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