Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

Nanocrystalline phases and GaAlP films are obtained by implanting Al+ ions with E0 = 1 keV at different doses on the surface of a GaP(111) single crystal, and their electronic and crystalline structures are studied. It is shown that the type and the lattice parameters of the three-component nanostructure are in good agreement with those for the substrate. The relationship between the band gap Eg and the sizes of the nanocrystalline phases is studied. It is established that quantum-size effects arise in the Ga0.6Al0.4P nanocrystalline phases in the case of surface sizes d of phases of less than 35–40 nm (3.5–4 nm thick).

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