Работы, цитирующие эту работу

Работ: 2

Работа: Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

1. Changes in the electronic structure of the Si surface as a result of ion implantation

   S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

   СтатьяIon-surface interactions and analysisE3S Web of Conferences2023Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.144489

2. Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

   S. B. Donaev, Ganjimurod Shirinov, Б. Е. Умирзаков +2

   СтатьяIon-surface interactions and analysisCoatings2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.002442