Changes in the electronic structure of the Si surface as a result of ion implantation
S. B. DonaevTashkent State Technical University, Street University, 2A, 100095 Tashkent, UzbekistanUmida ZiyamukhamedovaTashkent State Transport University, pass. 1st Temiryulchilar, 1, 100167 Tashkent, UzbekistanM. KenjaevaTashkent State Pedagogical University, Bunyodkor avenue, 27, 100070 Tashkent, UzbekistanGanjimurod ShirinovTashkent State Technical University, Street University, 2A, 100095 Tashkent, UzbekistanA.M. RakhimovTashkent State Technical University, Street University, 2A, 100095 Tashkent, UzbekistanA. A. AbduvayitovTashkent State Technical University, Street University, 2A, 100095 Tashkent, Uzbekistan
ABI
Аннотация
The composition, structure, and physicochemical properties of the surface and near-surface layers of silicon doped with low-energy (E 0 <5 keV) Ba + and O 2 + ions have been studied using a set of photoelectron and secondary electron spectroscopy methods. It has been established that in the process of ion implantation, chemical bonds are formed between the atoms of the alloying element and the matrix, the width of the energy bands and the density of electronic states in the bands change.
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