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Работы, на которые ссылается эта работа

Работ: 16

Работа: Changes in the electronic structure of the Si surface as a result of ion implantation

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 23
    ABI

  2. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    СтатьяIon-surface interactions and analysisTechnical Physics2011Цитирований: 19
    ABI

  3. Features of structural adaptability of polymer composite coatings

    Umida Ziyamukhamedova, Alijon Djumabaev, Bakhtiyor Urinov +1

    СтатьяAdvanced Theoretical and Applied Studies in Material Sciences and GeometryE3S Web of Conferences2021Цитирований: 17
    ABI

  4. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 15
    ABI

  5. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    СтатьяElectron and X-Ray Spectroscopy TechniquesTechnical Physics2017Цитирований: 14
    ABI

  6. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    СтатьяMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12
    ABI

  7. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 9
    ABI

  8. An ion track based approach to nano- and micro-electronics

    K. Hoppe, W. R. Fahrner, D. Fink +7

    Статья2008Цитирований: 9
    ABI

  9. Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2018Цитирований: 8
    ABI

  10. Influence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures

    Б. Е. Умирзаков, S. J. Nimatov, Kh. Kh. Boltaev

    СтатьяSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 8
    ABI

  11. Effect of the Ba+ Ion Implantation on the Composition and Electronic Properties of MoO3/Mo(111) Films

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Soadat Gulyamova +1

    СтатьяTransition Metal Oxide NanomaterialsTechnical Physics2020Цитирований: 6
    ABI

  12. Effect of implantation of Ba+ and Nb+ ions on the morphology, composition, and emission properties of Мо (111)

    Y. S. Ergashov, Б. Е. Умирзаков

    СтатьяAdvanced Chemical Physics StudiesJournal of Communications Technology and Electronics2017Цитирований: 5
    ABI

  13. Size effects on the luminescence spectrum in amorphous Si/SiO2 multilayer structures

    Yoshihiko Kanemitsu, Takashi Kushida

    Статья2000Цитирований: 4
    ABI

  14. Pseudogap, Nanocrystals and Electrical Conductivity of Doped Silicate Glass

    G. Abdurakhmanov, V. I. Shimanski, Б. Л. Оксенгендлер +2

    СтатьяElectrical and Thermal Properties of MaterialsTechnical Physics2021Цитирований: 3
    ABI

  15. Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System

    З. А. Исаханов, R. M. Yorkulov, Б. Е. Умирзаков +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 2
    ABI

  16. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2020Цитирований: 2
    ABI