Journal of Communications Technology and Electronics
Работ: 8
Журнал · ISSN 1064-2269
High-resolution X-ray photoelectron spectroscopy and characteristic electron-energy loss spectroscopy of the electronic structure of phosphorus-implanted silicon and quantum dots of silicon dioxide with silicon impurities
O. K. Kuvandikov, Э. У. Арзикулов, А. И. Ковалев +1
СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Communications Technology and Electronics2007Цитирований: 0ABI