Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System
З. А. ИсахановInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, 100125, Tashkent, UzbekistanR. M. YorkulovInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, 100125, Tashkent, UzbekistanБ. Е. УмирзаковTashkent State Technical University, 100095, Tashkent, UzbekistanM. Sh. IsayevTashkent State Technical University, 100095, Tashkent, UzbekistanA. A. AbduvayitovTashkent State Technical University, 100095, Tashkent, Uzbekistan
ABI
Аннотация
Nanophases and films of SiO2 and metal silicides are obtained by the low-energy (E0 = 1–5 keV) implantation of $${\text{O}}_{{\text{2}}}^{{\text{ + }}},$$ Ba+, Cu+ and Co+ ions followed by annealing on the surface of a free Si/Cu (100) nanofilm system. Their surface morphology, composition, energy-band parameters, the maximum value of the secondary-electron-emission coefficient, and the quantum yield of photoelectrons are determined. It is shown that the band gap of metal silicides is 0.3–0.4 eV, and their specific resistance is 100–500 µOhm cm.
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