Z. E. Mukhtarov

Работ: 5

Arifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, ul. Khodzhaeva 33, Akademgorodok, Tashkent, 100125, Uzbekistan

1. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

   З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

   СтатьяIon-surface interactions and analysisTechnical Physics2011Цитирований: 19

   ABIABI:AkademIndex/openalex/2011.article.000044

2. Effect of implantation of active metal ions on the elemental and chemical compositions of the CdTe surface

   Z. E. Mukhtarov, З. А. Исаханов, Б. Е. Умирзаков +2

   СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics2015Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.104959

3. Analysis of profiles of atomic distribution over the depth of Si-Me free nanofilm systems

   Б. Е. Умирзаков, З. А. Исаханов, М. К. Рузибаева +2

   СтатьяSemiconductor materials and interfacesTechnical Physics2015Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.495098

4. Stimulation of secondary negative ion emission by implantation of alkaline ions into the surface layer of a solid followed by heating

   А. А. Алиев, З. А. Исаханов, Z. E. Mukhtarov +1

   СтатьяIon-surface interactions and analysisTechnical Physics2010Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.228832

5. Estimation of the sizes of disordered surface regions of Cu and Ag thin films using the ion transmission method

   З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +2

   СтатьяCopper Interconnects and ReliabilityJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2013Цитирований: 0

   ABIABI:AkademIndex/openalex/2013.article.000396