Effect of implantation of active metal ions on the elemental and chemical compositions of the CdTe surface
Z. E. MukhtarovInstitute of Ion–Plasma and Laser Technologies, Uzbekistan Academy of Sciences, ul. Durman yuli 33, Tashkent, 100125, UzbekistanЗ. А. ИсахановInstitute of Ion–Plasma and Laser Technologies, Uzbekistan Academy of Sciences, ul. Durman yuli 33, Tashkent, 100125, UzbekistanБ. Е. УмирзаковInstitute of Ion–Plasma and Laser Technologies, Uzbekistan Academy of Sciences, ul. Durman yuli 33, Tashkent, 100125, UzbekistanTulkin KodirovInstitute of Ion–Plasma and Laser Technologies, Uzbekistan Academy of Sciences, ul. Durman yuli 33, Tashkent, 100125, UzbekistanE. S. ErgashevTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, Uzbekistan
ABI
Аннотация
We study the effect of bombardment with Ar+ and Ba+ ions on the composition and electron structure of the CdTe film surface. The optimal ion implantation and annealing regimes for obtaining a nanofilm of the Cd0.5Ba0.5Te type are determined. It is found that the value of E g of the three-component film decreases from 1.9 to 1.7 eV upon an increase in its thickness from 20 to 40 nm.
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