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Z. E. Mukhtarov

5 та иш

Arifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, ul. Khodzhaeva 33, Akademgorodok, Tashkent, 100125, Uzbekistan

  1. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    МақолаIon-surface interactions and analysisTechnical Physics201119 иқтибос
    ABI

  2. Effect of implantation of active metal ions on the elemental and chemical compositions of the CdTe surface

    Z. E. Mukhtarov, З. А. Исаханов, Б. Е. Умирзаков +2

    МақолаAdvanced Semiconductor Detectors and MaterialsTechnical Physics20156 иқтибос
    ABI

  3. Analysis of profiles of atomic distribution over the depth of Si-Me free nanofilm systems

    Б. Е. Умирзаков, З. А. Исаханов, М. К. Рузибаева +2

    МақолаSemiconductor materials and interfacesTechnical Physics20155 иқтибос
    ABI

  4. Stimulation of secondary negative ion emission by implantation of alkaline ions into the surface layer of a solid followed by heating

    А. А. Алиев, З. А. Исаханов, Z. E. Mukhtarov +1

    МақолаIon-surface interactions and analysisTechnical Physics20103 иқтибос
    ABI

  5. Estimation of the sizes of disordered surface regions of Cu and Ag thin films using the ion transmission method

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +2

    МақолаCopper Interconnects and ReliabilityJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20130 иқтибос
    ABI