Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission
З. А. ИсахановArifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, ul. Khodzhaeva 33, Akademgorodok, Tashkent, 100125, UzbekistanZ. E. MukhtarovArifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, ul. Khodzhaeva 33, Akademgorodok, Tashkent, 100125, UzbekistanБ. Е. УмирзаковArifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, ul. Khodzhaeva 33, Akademgorodok, Tashkent, 100125, UzbekistanМ. К. РузибаеваArifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, ul. Khodzhaeva 33, Akademgorodok, Tashkent, 100125, Uzbekistan
ABI
Аннотация
The type, energy, ion dose, and heating temperature required to ensure a stable minimum work function of a surface in one experimental cycle (at least 2–3 min) are determined. Secondary ion mass spectrograms are recorded using Cs+, Ba+, and Ar+ ions. Cu, Al, and Mo samples are studied. The optimum ion implantation conditions and the activation temperature that provide a stable minimum work function of the sample surfaces are found. The samples implanted by Ba+ ions withstand higher temperature and current loads than the samples implanted by Cs+ ions. However, the work function in the case of Cs+ ions decreases stronger (to 1.9 eV). It is shown that neutral sputtered particles do not leave the surface at eφ ≤ 1.85–1.90 eV.
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