Асосий контентга ўтиш
AkademIndex

Маҳсулотлар

Ишлаб чиқувчилар учун

AkademBaseтез орадаЭкотизим учун очиқ API
Лотин
Ўзбек
← Ишга қайтиш

Ушбу ишга иқтибос қилган ишлар

19 та иш

Иш: Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

  1. Changes in the electronic structure of the Si surface as a result of ion implantation

    S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

    МақолаIon-surface interactions and analysisE3S Web of Conferences20234 иқтибос
    ABI

  2. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    МақолаIon-surface interactions and analysisAIP conference proceedings20224 иқтибос
    ABI

  3. The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

    Б. Е. Умирзаков, Р. Х. Ашуров, S. B. Donaev

    МақолаSemiconductor materials and interfacesTechnical Physics20194 иқтибос
    ABI

  4. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

    МақолаSemiconductor materials and devicesTechnical Physics Letters20204 иқтибос
    ABI

  5. Composition of uncontrolled impurities and their chemical states and depth profiles at the Al-Si interface

    А.А. Абдувайитов, Kh. Kh. Boltaev

    МақолаSemiconductor materials and interfacesTechnical Physics20153 иқтибос
    ABI

  6. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    МақолаNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 иқтибос
    ABI

  7. Obtaining nanoscale CoSiO/Si/CoSi<sub>2</sub> systems for increasing the range of light ray absorption energy

    S. B. Donaev, Б. Е. Умирзаков, D U Sobirova +2

    МақолаSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science20202 иқтибос
    ABI

  8. Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System

    З. А. Исаханов, R. M. Yorkulov, Б. Е. Умирзаков +2

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20212 иқтибос
    ABI

  9. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20202 иқтибос
    ABI

  10. Fabrication and Study of the Electronic Structure of МоO3/Мо Nanofilms

    G. Kh. Allayarova

    МақолаTransition Metal Oxide NanomaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20200 иқтибос
    ABI

  11. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

    Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20210 иқтибос
    ABI

  12. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20220 иқтибос
    ABI

  13. Study of the critical angle of channeling of active metal ions through thin aluminum films

    З. А. Исаханов, Б. Е. Умирзаков, S. S. Nasriddinov +2

    МақолаIon-surface interactions and analysisПисьма в журнал технической физики20220 иқтибос
    ABI

  14. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

    S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

    МақолаSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 иқтибос
    ABI

  15. On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

    N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков +1

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 иқтибос
    ABI

  16. Influence of Implantation of Active Metal Ions on the Composition, Emission and Optical Properties of MgO Films

    Maxsuna Yusupjonova, Д. А. Ташмухамедова, Б. Е. Умирзаков +3

    МақолаZnO doping and propertiesEast European Journal of Physics20250 иқтибос
    ABI

  17. Regional Variations in Mechanical Properties of Porcine Leptomeninges

    Chenyi Lei, Wenyuan Shao, Xi Yuan +8

    МақолаAutomotive and Human Injury BiomechanicsCyborg and Bionic Systems20250 иқтибос
    ABI

  18. STUDY of the influence of temperature and gamma radiation on the crystal structure of a thin TiO2 coating obtained on A Si (111) surface

    B.E. Umirzakov, Z.A. Isaxanov, I.R. Bekpulatov +3

    МақолаChemical and Physical Properties of MaterialsPhysics Letters A20260 иқтибос
    ABI

  19. Study of the effect of thermal treatment OF Mn4Si7 and CoSi2 thin films using an infrared lamp in a high-temperature furnace in inert gas environments (Ar, Kr, Xe) On their crystal structure

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +5

    МақолаSemiconductor materials and interfacesSolid State Sciences20260 иқтибос
    ABI