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N. M. Mustafoeva

8 та иш

Karshi State University, 180003, Karshi, Uzbekistan

  1. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

    МақолаSemiconductor materials and interfacesSemiconductors20204 иқтибос
    ABI

  2. Electronic and Optical Properties of NiSi2/Si Nanofilms

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1

    МақолаSurface and Thin Film PhenomenaTechnical Physics20193 иқтибос
    ABI

  3. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

    N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 иқтибос
    ABI

  4. On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

    N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков +1

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 иқтибос
    ABI

  5. STUDY OF THE EFFECT OF Ni⁺ ION IMPLANTATION ON THE NEAR-SURFACE LAYERS OF SILICON USING MODERN ANALYSIS METHODS

    N. M. Mustafoeva, A. K. Tashatov, Bünyamin Şahin

    БошқаZenodo (CERN European Organization for Nuclear Research)20260 иқтибос
    ABI

  6. STUDY OF THE EFFECT OF Ni⁺ ION IMPLANTATION ON THE NEAR-SURFACE LAYERS OF SILICON USING MODERN ANALYSIS METHODS

    N. M. Mustafoeva, A. K. Tashatov, Bünyamin Şahin

    БошқаZenodo (CERN European Organization for Nuclear Research)20260 иқтибос
    ABI

  7. SCIENTIFIC AND METHODOLOGICAL BASIS FOR THE APPLICATION OF ARTIFICIAL INTELLIGENCE IN TEACHING PHYSICAL ELECTRONICS

    N. M. Mustafoeva

    БошқаZenodo (CERN European Organization for Nuclear Research)20260 иқтибос
    ABI

  8. SCIENTIFIC AND METHODOLOGICAL BASIS FOR THE APPLICATION OF ARTIFICIAL INTELLIGENCE IN TEACHING PHYSICAL ELECTRONICS

    N. M. Mustafoeva

    БошқаZenodo (CERN European Organization for Nuclear Research)20260 иқтибос
    ABI