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Works citing this work

19 works

Work: Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

  1. Changes in the electronic structure of the Si surface as a result of ion implantation

    S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

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  2. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

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  3. The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

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  4. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

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    ABI

  5. Composition of uncontrolled impurities and their chemical states and depth profiles at the Al-Si interface

    А.А. Абдувайитов, Kh. Kh. Boltaev

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  6. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    ArticleNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 citations
    ABI

  7. Obtaining nanoscale CoSiO/Si/CoSi<sub>2</sub> systems for increasing the range of light ray absorption energy

    S. B. Donaev, Б. Е. Умирзаков, D U Sobirova +2

    ArticleSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science20202 citations
    ABI

  8. Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System

    З. А. Исаханов, R. M. Yorkulov, Б. Е. Умирзаков +2

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    ABI

  9. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

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  10. Fabrication and Study of the Electronic Structure of МоO3/Мо Nanofilms

    G. Kh. Allayarova

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    ABI

  11. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

    Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

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    ABI

  12. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

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  13. Study of the critical angle of channeling of active metal ions through thin aluminum films

    З. А. Исаханов, Б. Е. Умирзаков, S. S. Nasriddinov +2

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  14. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

    S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

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  15. On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

    N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков +1

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  16. Influence of Implantation of Active Metal Ions on the Composition, Emission and Optical Properties of MgO Films

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  17. Regional Variations in Mechanical Properties of Porcine Leptomeninges

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  18. STUDY of the influence of temperature and gamma radiation on the crystal structure of a thin TiO2 coating obtained on A Si (111) surface

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    ABI

  19. Study of the effect of thermal treatment OF Mn4Si7 and CoSi2 thin films using an infrared lamp in a high-temperature furnace in inert gas environments (Ar, Kr, Xe) On their crystal structure

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +5

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