Article

Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

S. B. DonaevTashkent State Technical University, Street University, 2A, 100095 Tashkent, UzbekistanGanjimurod ShirinovTashkent State Technical University, Street University, 2A, 100095 Tashkent, UzbekistanSurayyo ErgashevaTashkent State Pedagogical University, Bunyodkor avenue, 27, 100070 Tashkent, UzbekistanA.M. RakhimovTashkent State Technical University, Street University, 2A, 100095 Tashkent, UzbekistanShenghao WangMaterials Genome Institute, Shanghai University, Building 7, East Campus, 333 Nan Chen Road, Bao Shan District, Shanghai, ChinaA. A. AbduvayitovTashkent State Technical University, Street University, 2A, 100095 Tashkent, Uzbekistan

E3S Web of Conferencesjournal2023en

ABI

Abstract

Auger electron spectroscopy combined with ion etching was used to study the effect of ion doping on the distribution profiles of atoms in silicon in contact with its surface. It has been established that preliminary implantation of Ba + ions with E 0 =0.5-1 keV leads to a sharp decrease (by a factor of 10-12) in the diffusion length of oxygen and nickel atoms.

Topics

Silicon Nanostructures and Photoluminescence Silicon and Solar Cell Technologies Ion-surface interactions and analysis

Identifiers

DOI: 10.1051/e3sconf/202338304041

Citations and references

Cited by 014 references

Metrics — AkademScholar · Coming soon