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Works cited by this work

14 works

Work: Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

  1. Slowing down the corrosion of metal structures using polymeric materials

    Fayzulla Nurkulov, Umida Ziyamukhamedova, Erkin Rakhmatov +1

    ArticleMaterial Properties and ApplicationsE3S Web of Conferences202128 citations
    ABI

  2. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 citations
    ABI

  3. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 citations
    ABI

  4. Mathematical Modeling of Rheological Properties During Structure Formation of Heterocomposite Potting Materials and Coatings and Their Application

    Gavkhar Miradullaeva, Erkin Rakhmatov, Otabek Bozorov +2

    ChapterEngineering and Agricultural InnovationsLecture notes in civil engineering202121 citations
    ABI

  5. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    ArticleIon-surface interactions and analysisTechnical Physics201119 citations
    ABI

  6. Features of structural adaptability of polymer composite coatings

    Umida Ziyamukhamedova, Alijon Djumabaev, Bakhtiyor Urinov +1

    ArticleAdvanced Theoretical and Applied Studies in Material Sciences and GeometryE3S Web of Conferences202117 citations
    ABI

  7. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    ArticleSemiconductor materials and interfacesTechnical Physics201415 citations
    ABI

  8. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

    Y. S. Ergashov

    ArticleElectron and X-Ray Spectroscopy TechniquesTechnical Physics201714 citations
    ABI

  9. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    ArticleMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 citations
    ABI

  10. An ion track based approach to nano- and micro-electronics

    K. Hoppe, W. R. Fahrner, D. Fink +7

    Article20089 citations
    ABI

  11. Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime

    Shinji Takeoka, Minoru Fujii, Shinji Hayashi

    Article20007 citations
    ABI

  12. Size effects on the luminescence spectrum in amorphous Si/SiO2 multilayer structures

    Yoshihiko Kanemitsu, Takashi Kushida

    Article20004 citations
    ABI

  13. Auger electron spectroscopy and electron energy loss spectroscopy studies of the formation of silicon nitride by implanting low energy nitrogen ions into silicon

    N. Lieske, Rudolf Hezel

    Article19813 citations
    ABI

  14. Crystallographic study of semi-insulating polycrystalline silicon (SIPOS) doped with oxygen atoms

    M. Hamasaki, T. Adachi, S. Wakayama +1

    Article19782 citations
    ABI