Article

Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

S. B. DonaevTashkent State Technical University, Tashkent, 100095, UzbekistanA. K. TashatovTashkent State Technical University, Tashkent, 100095, UzbekistanБ. Е. УмирзаковTashkent State Technical University, Tashkent, 100095, Uzbekistan

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniquesjournal2015en

ABI

Abstract

The effect of Ar+-ion bombardment on the surface composition and structure of CoSi2/Si nano-films is studied. It is demonstrated that ion bombardment leads to the decomposition of CoSi2 and enrichment of the film surface with Si atoms. After heating at T = 850–900 K, the Si-CoSi2-Si nanofilm system forms.

Topics

Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis Diamond and Carbon-based Materials Research

Identifiers

DOI: 10.1134/s1027451015020263

Citations and references

Cited by 23 7 references

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