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Works citing this work

23 works

Work: Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

  1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    ArticleSemiconductor materials and interfacesInternational Journal of Modern Physics B202222 citations
    ABI

  2. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    ArticleSemiconductor materials and interfacesModern Physics Letters B202317 citations
    ABI

  3. Formation of thin Crsi <sub>2</sub> films by the solid-phase ion-plasma method and their thermoelectric properties

    I. R. Bekpulatov, Gunel Imanova, Б. Е. Умирзаков +5

    ArticleAdvanced Thermoelectric Materials and DevicesMaterials Research Innovations20249 citations
    ABI

  4. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    ArticleSemiconductor materials and interfacesE3S Web of Conferences20239 citations
    ABI

  5. Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +5

    ArticleX-ray Diffraction in CrystallographyJournal of Crystal Growth20248 citations
    ABI

  6. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

    Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

    ArticleElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences20216 citations
    ABI

  7. Study of structure formation processes in matrices of mixed components with reinforcing natural fillers

    Umida Ziyamukhamedova, Lutfullo Bakirov, S. B. Donaev +2

    ArticleMaterial Properties and ApplicationsE3S Web of Conferences20236 citations
    ABI

  8. The solid-phase ion-plasma method and thermoelectric properties of thin CrSi2 films

    I. R. Bekpulatov, Gunel Imanova, S. H. Jabarov +8

    ArticleAdvanced Thermoelectric Materials and DevicesJournal of Materials Science Materials in Electronics20246 citations
    ABI

  9. Changes in the electronic structure of the Si surface as a result of ion implantation

    S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

    ArticleIon-surface interactions and analysisE3S Web of Conferences20234 citations
    ABI

  10. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    ArticleIon-surface interactions and analysisAIP conference proceedings20224 citations
    ABI

  11. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

    ArticleSemiconductor materials and devicesTechnical Physics Letters20204 citations
    ABI

  12. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>

    Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

    ArticleSemiconductor materials and interfacesMaterials Research Innovations20243 citations
    ABI

  13. Regularities of the Formation of SiO2 Nanophases and Nanofilms on a Si Surface during $${\text{O}}_{2}^{ + }$$-Ion Implantation

    G. Kh. Allayarova

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20222 citations
    ABI

  14. Influence of implantation of O2+ ions on the composition and electronic structure of the W(111) surface

    З. А. Исаханов, Б. Е. Умирзаков, D.Kh. Nabiev +5

    ArticleTransition Metal Oxide NanomaterialsMicro and Nano Systems Letters20242 citations
    ABI

  15. Obtaining nanoscale CoSiO/Si/CoSi<sub>2</sub> systems for increasing the range of light ray absorption energy

    S. B. Donaev, Б. Е. Умирзаков, D U Sobirova +2

    ArticleSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science20202 citations
    ABI

  16. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    ArticleSemiconductor materials and interfacesE3S Web of Conferences20211 citations
    ABI

  17. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20220 citations
    ABI

  18. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

    S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

    ArticleSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 citations
    ABI

  19. Studying the Trajectory of Scattered Ions from Surface Atomic Rows SiO<sub>2</sub>(001)&lt;110&gt; at Glancing Incidence

    Atabek S. Ashirov, Mukhtorjon K. Karimov, Uchkun Kutliev +1

    ArticleIon-surface interactions and analysis20240 citations
    ABI

  20. On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

    N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков +1

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 citations
    ABI

  21. Regional Variations in Mechanical Properties of Porcine Leptomeninges

    Chenyi Lei, Wenyuan Shao, Xi Yuan +8

    ArticleAutomotive and Human Injury BiomechanicsCyborg and Bionic Systems20250 citations
    ABI

  22. Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +1

    ArticleSemiconductor materials and interfacesMaterials Today Communications20260 citations
    ABI

  23. Study of the effect of thermal treatment OF Mn4Si7 and CoSi2 thin films using an infrared lamp in a high-temperature furnace in inert gas environments (Ar, Kr, Xe) On their crystal structure

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +5

    ArticleSemiconductor materials and interfacesSolid State Sciences20260 citations
    ABI