Article

Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

I. R. BekpulatovTashkent State Technical University, Tashkent, UzbekistanIlkhom TurapovTashkent State Technical University, Tashkent, UzbekistanS. T. AbraevaTashkent State Technical University, Tashkent, UzbekistanJakhongir NormuminovTashkent State Technical University, Tashkent, Uzbekistan

E3S Web of Conferencesjournal2021en

ABI

Abstract

Using the methods of electron spectroscopy and slow electron diffraction, we studied the processes of the formation of nanosized metal silicide films in the near-surface region of Si (111) and Si (100) during low-energy implantation of Ba ions and alkaline elements. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. The type of surface superstructures of thin silicide films has been established.

Topics

Semiconductor materials and interfaces Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis

Identifiers

DOI: 10.1051/e3sconf/202126405037

Citations and references

Cited by 1 19 references

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