Article

On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

Б. Е. УмирзаковTashkent State Technical University, Tashkent, 100095, UzbekistanS. B. DonaevTashkent State Technical University, Tashkent, 100095, Uzbekistan

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniquesjournal2017en

ABI

Abstract

The effect of preliminary low-energy (~1 keV) and low-dose (~1012–1014 cm–2) ion bombardment on the initial stages of growth of Si films on a CaF2/Si surface is investigated. Ordered nanocrystal phases (thickness less than 5–6 monolayers) and homogeneous epitaxial nanofilms (thickness more than 8–10 monolayers) of silicon are shown to be formed after annealing.

Topics

Ion-surface interactions and analysis Metal and Thin Film Mechanics Semiconductor materials and devices

Identifiers

DOI: 10.1134/s1027451017040139

Citations and references

Cited by 21 9 references

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