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Работы, цитирующие эту работу

Работ: 19

Работа: Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

  1. Changes in the electronic structure of the Si surface as a result of ion implantation

    S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

    СтатьяIon-surface interactions and analysisE3S Web of Conferences2023Цитирований: 4
    ABI

  2. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    СтатьяIon-surface interactions and analysisAIP conference proceedings2022Цитирований: 4
    ABI

  3. The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

    Б. Е. Умирзаков, Р. Х. Ашуров, S. B. Donaev

    СтатьяSemiconductor materials and interfacesTechnical Physics2019Цитирований: 4
    ABI

  4. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2020Цитирований: 4
    ABI

  5. Composition of uncontrolled impurities and their chemical states and depth profiles at the Al-Si interface

    А.А. Абдувайитов, Kh. Kh. Boltaev

    СтатьяSemiconductor materials and interfacesTechnical Physics2015Цитирований: 3
    ABI

  6. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    СтатьяNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science2020Цитирований: 3
    ABI

  7. Obtaining nanoscale CoSiO/Si/CoSi<sub>2</sub> systems for increasing the range of light ray absorption energy

    S. B. Donaev, Б. Е. Умирзаков, D U Sobirova +2

    СтатьяSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science2020Цитирований: 2
    ABI

  8. Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System

    З. А. Исаханов, R. M. Yorkulov, Б. Е. Умирзаков +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 2
    ABI

  9. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2020Цитирований: 2
    ABI

  10. Fabrication and Study of the Electronic Structure of МоO3/Мо Nanofilms

    G. Kh. Allayarova

    СтатьяTransition Metal Oxide NanomaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 0
    ABI

  11. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

    Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2021Цитирований: 0
    ABI

  12. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2022Цитирований: 0
    ABI

  13. Study of the critical angle of channeling of active metal ions through thin aluminum films

    З. А. Исаханов, Б. Е. Умирзаков, S. S. Nasriddinov +2

    СтатьяIon-surface interactions and analysisПисьма в журнал технической физики2022Цитирований: 0
    ABI

  14. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

    S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

    СтатьяSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences2023Цитирований: 0
    ABI

  15. On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

    N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков +1

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  16. Influence of Implantation of Active Metal Ions on the Composition, Emission and Optical Properties of MgO Films

    Maxsuna Yusupjonova, Д. А. Ташмухамедова, Б. Е. Умирзаков +3

    СтатьяZnO doping and propertiesEast European Journal of Physics2025Цитирований: 0
    ABI

  17. Regional Variations in Mechanical Properties of Porcine Leptomeninges

    Chenyi Lei, Wenyuan Shao, Xi Yuan +8

    СтатьяAutomotive and Human Injury BiomechanicsCyborg and Bionic Systems2025Цитирований: 0
    ABI

  18. STUDY of the influence of temperature and gamma radiation on the crystal structure of a thin TiO2 coating obtained on A Si (111) surface

    B.E. Umirzakov, Z.A. Isaxanov, I.R. Bekpulatov +3

    СтатьяChemical and Physical Properties of MaterialsPhysics Letters A2026Цитирований: 0
    ABI

  19. Study of the effect of thermal treatment OF Mn4Si7 and CoSi2 thin films using an infrared lamp in a high-temperature furnace in inert gas environments (Ar, Kr, Xe) On their crystal structure

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +5

    СтатьяSemiconductor materials and interfacesSolid State Sciences2026Цитирований: 0
    ABI