Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

Аннотация

The morphology, composition, and electronic properties of CoSiO films formed on a CoSi2/Si(111) substrate surface by $${\text{O}}_{2}^{ + }$$ ion implantation followed by thermal annealing have been studied. Energy band structure parameters are determined, and information on the density of electron states in the valence and conduction bands is obtained. The bandgap width of a CoSiO film is estimated at ~2.4 eV.

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Идентификаторы

DOI

10.1134/s1063785020080192

Цитирования и источники