Obtaining nanoscale CoSiO/Si/CoSi<sub>2</sub> systems for increasing the range of light ray absorption energy
S. B. DonaevTashkent State Technical University, University str. 2, Tashkent, UzbekistanБ. Е. УмирзаковTashkent State Technical University, University str. 2, Tashkent, UzbekistanD U SobirovaTashkent State Technical University, University str. 2, Tashkent, UzbekistanTohir AzimovTashkent State Technical University, University str. 2, Tashkent, UzbekistanD K AlimovaTashkent State Technical University, University str. 2, Tashkent, Uzbekistan
ABI
Аннотация
Abstract The morphology, composition and electronic properties of the CoSiO film obtained on the CoSi 2 /Si (111) surface by implantation of O 2 + ions in combination with annealing were studied. Parameters of energy zones are determined and information about the density of the state of electrons of the valence zone and conductivity zone is obtained. In particular, it is shown that the band gap width of this film is ~2.4 eV. It was ascertained that the CoSiO/Si/CoSi 2 heterosystem is very promising for creating efficient solar energy devices.
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