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Работы, на которые ссылается эта работа

Работ: 21

Работа: Obtaining nanoscale CoSiO/Si/CoSi<sub>2</sub> systems for increasing the range of light ray absorption energy

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 23
    ABI

  2. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21
    ABI

  3. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

    S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

    СтатьяIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2014Цитирований: 20
    ABI

  4. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    СтатьяIon-surface interactions and analysisTechnical Physics2011Цитирований: 19
    ABI

  5. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing

    Б. Е. Умирзаков, T.S. Pugacheva, A.T. Tashatov +1

    СтатьяInorganic Fluorides and Related CompoundsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2000Цитирований: 16
    ABI

  6. Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisTechnical Physics2018Цитирований: 14
    ABI

  7. Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2

    СтатьяSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2014Цитирований: 13
    ABI

  8. An ion track based approach to nano- and micro-electronics

    K. Hoppe, W. R. Fahrner, D. Fink +7

    Статья2008Цитирований: 9
    ABI

  9. Composition, morphology, and electronic structure of the nanophases created on the SiO2 Surface by Ar+ ion bombardment

    M. B. Yusupjanova, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisTechnical Physics2016Цитирований: 7
    ABI

  10. Scanning tunneling microscopy observation of ultrathin epitaxial CoSi2(111) films grown at a high temperature

    Aleksandr Alekseev, D.A. Olyanich, T.V. Utas +3

    Статья2015Цитирований: 6
    ABI

  11. Photoluminescence of porous silicon saturated with tungsten-tellurite glass with rare-earth metal impurities

    Е. С. Демидов, Alexey Mikhaylov, A. I. Belov +7

    Статья2011Цитирований: 5
    ABI

  12. Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 &lt; x &lt; 2)

    Yu. K. Undalov, Е. И. Теруков

    Статья2015Цитирований: 5
    ABI

  13. Growth and characterization of CoSi2 films on Si (100) substrates

    Fumitoshi Takahashi, Tetsuji Irie, Ji Shi +1

    Статья2001Цитирований: 2
    ABI

  14. Interaction of cobalt atoms with an oxidized Si(111)7 × 7 surface

    M. V. Gomoyunova, T. E. Voistrik, I. I. Pronin

    Статья2009Цитирований: 2
    ABI

  15. Oxide mediated epitaxy of CoSi2 on silicon

    R. T. Tung

    Статья1996Цитирований: 2
    ABI

  16. Solid-phase epitaxial growth of CoSi2 on clean and oxygen-adsorbed Si(001) surfaces

    Yukihiro Hayashi, Motoki Yoshinaga, Hiroya Ikeda +2

    Статья1999Цитирований: 2
    ABI

  17. A Novel Technique for Ultrathin CoSi<sub>2</sub> Layers: Oxide Mediated Epitaxy

    R. T. Tung

    Статья1997Цитирований: 2
    ABI

  18. Photoemission study of cobalt interaction with the oxidized Si(100)2×1 surface

    M. V. Gomoyunova, I. I. Pronin, D. E. Malygin +3

    Статья2006Цитирований: 2
    ABI

  19. Silicon nanostructures for photonics and photovoltaics

    F. Priolo, T. Gregorkiewicz, Mattéo Galli +1

    Обзорная статья2014Цитирований: 2
    ABI

  20. Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide

    Aleksey Mikhaylov, Alexey V. Afanasyev, Vladimir A. Ilyin +5

    Статья2016Цитирований: 2
    ABI

  21. Без названия

    ДругоеЦитирований: 1
    ABI