Статья

Composition, morphology, and electronic structure of the nanophases created on the SiO2 Surface by Ar+ ion bombardment

M. B. YusupjanovaTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, UzbekistanД. А. ТашмухамедоваTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, UzbekistanБ. Е. УмирзаковTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, Uzbekistan

Technical Physicsjournal2016en

ABI

Аннотация

The influence of Ar+ bombardment on the composition and the structure of the SiO2/Si surface is studied. A thin Si film is found to form on the SiO2 surface subjected to high-dose ion bombardment.

Темы

Ion-surface interactions and analysis Advanced Memory and Neural Computing Semiconductor materials and devices

Идентификаторы

DOI: 10.1134/s1063784216040253

Цитирования и источники

Цитирований: 7 Использованных источников: 4

Показатели — AkademScholar · Скоро