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Composition, morphology, and electronic structure of the nanophases created on the SiO2 Surface by Ar+ ion bombardment

M. B. YusupjanovaTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, UzbekistanД. А. ТашмухамедоваTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, UzbekistanБ. Е. УмирзаковTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, Uzbekistan
Technical Physicsjournal2016en
ABI

Abstract

The influence of Ar+ bombardment on the composition and the structure of the SiO2/Si surface is studied. A thin Si film is found to form on the SiO2 surface subjected to high-dose ion bombardment.

Topics

Ion-surface interactions and analysisAdvanced Memory and Neural ComputingSemiconductor materials and devices

Identifiers

DOI
10.1134/s1063784216040253

Citations and references

Cited by 74 references
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