Статья

Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation

Y. S. ErgashovTashkent State Technical University, 100095, Tashkent, UzbekistanБ. Е. УмирзаковTashkent State Technical University, 100095, Tashkent, Uzbekistan

Technical Physicsjournal2018en

ABI

Аннотация

Bilayer CoSi2/Si/CoSi2/Si system has been obtained by the method of ion implantation, and optimal conditions for implantation and postimplantation annealing have been found. It has been shown that this system forms when the high and low ion energies differ by no less than 15–20 keV. The structures have smooth surface and high crystallinity.

Темы

Ion-surface interactions and analysis Semiconductor materials and interfaces Advanced Materials Characterization Techniques

Идентификаторы

DOI: 10.1134/s1063784218120058

Цитирования и источники

Цитирований: 14 Использованных источников: 6

Показатели — AkademScholar · Скоро