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I.R. Bekpulatov

Работ: 7

Karshi State University180119, Karshi, Uzbekistan

  1. Comprehensive analysis of thickness-dependent structural, morphological, and optical properties of TiO2 based thin films

    B.D. Igamov, I.R. Bekpulatov, A.M. Normamatov +3

    СтатьяTiO2 Photocatalysis and Solar CellsResults in Optics2026Цитирований: 0
    ABI

  2. Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +1

    СтатьяSemiconductor materials and interfacesMaterials Today Communications2026Цитирований: 0
    ABI

  3. Chemical analysis of ion traces in the betta Ga2O3 structure and fundamentals of molecular dynamics of mobilization hydrogen and helium molecules

    A.S. Nygymanova, G. Yergaliuly, Bakytbek Mauyey +9

    СтатьяGa2O3 and related materialsResults in Materials2026Цитирований: 0
    ABI

  4. Study of polymer coatings implanted with high-energy ion beams

    B.D. Igamov, A.I. Kamardin, I.Yu Kochemasov +4

    СтатьяPolymer Nanocomposite Synthesis and IrradiationNext Materials2026Цитирований: 0
    ABI

  5. STUDY of the influence of temperature and gamma radiation on the crystal structure of a thin TiO2 coating obtained on A Si (111) surface

    B.E. Umirzakov, Z.A. Isaxanov, I.R. Bekpulatov +3

    СтатьяChemical and Physical Properties of MaterialsPhysics Letters A2026Цитирований: 0
    ABI

  6. Microstructural, phase and electrophysical properties of TiSi2 alloy synthesized by Spark Plasma Sintering

    B.D. Igamov, I.R. Bekpulatov, A.M. Normamatov +3

    СтатьяSemiconductor materials and interfacesJournal of Alloys and Compounds2026Цитирований: 0
    ABI

  7. Study of the effect of thermal treatment OF Mn4Si7 and CoSi2 thin films using an infrared lamp in a high-temperature furnace in inert gas environments (Ar, Kr, Xe) On their crystal structure

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +5

    СтатьяSemiconductor materials and interfacesSolid State Sciences2026Цитирований: 0
    ABI