Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide
Аннотация
Films of manganese silicide Mn 4 Si 7 with a thickness of about 500 nm, obtained by magnetron sputtering of targets, have noticeable thermoelectric properties. Thus, the Seebeck coefficient in the temperature range 300-800 K varies from 3 to 28 mV/K, and increases several times after thermal treatment of the film. Thermal power also increases. The resistance of the silicide film drops after heat treatment from 300 to 7 Ohm∙cm. The sizes of manganese silicide crystals are in the range of 3.8∙10 -10 - 3.6∙10 -8 m and after annealing they reach 1.29∙10 -9 - 3.06∙10 -8 m. The dislocation density reaches values of 7.6∙10 10 - 6.5∙10 14 m -2 . It was found that the lattice strain between the atoms of a thin silicide coating ranges from 0.019 to 0.028 and crystallization increases from 5 to 50% with increasing annealing temperature. The degree of crystallization and amorphism of a thin coating of Mn 4 Si 7 silicide.