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Работы, на которые ссылается эта работа

Работ: 21

Работа: Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 23
    ABI

  2. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21
    ABI

  3. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

    S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

    СтатьяIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2014Цитирований: 20
    ABI

  4. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    СтатьяSemiconductor materials and interfacesModern Physics Letters B2023Цитирований: 17
    ABI

  5. Effect of the O+2-ion bombardment on the TiN composition and structure

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +1

    СтатьяMetal and Thin Film MechanicsTechnical Physics2015Цитирований: 13
    ABI

  6. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    СтатьяIon-surface interactions and analysisTechnical Physics2015Цитирований: 13
    ABI

  7. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 9
    ABI

  8. Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering

    Б.Д. Игамов, Gunel Imanova, A.I. Kamardin +1

    СтатьяSemiconductor materials and interfacesBulletin of the Karaganda University Physics Series2023Цитирований: 7
    ABI

  9. Photovoltaic Properties of Silicon Doped with Manganese and Germanium

    Н. Ф. Зикриллаев, Habibjon Kushiev, С. Б. Исамов +2

    Статья2023Цитирований: 7
    ABI

  10. Estimation of lattice strain in ZnO nanoparticles: X-ray peak profile analysis

    P. Bindu, Sabu Thomas

    Статья2014Цитирований: 5
    ABI

  11. Size–strain study of NiO nanoparticles by X-ray powder diffraction line broadening

    N. S. Gonçalves, Juliana Angélica Evangelista de Carvalho, Z.M. Lima +1

    Статья2011Цитирований: 3
    ABI

  12. Localized epitaxial growth of MnSi1.7 on silicon

    Yiling Lian, L. J. Chen

    Статья1986Цитирований: 3
    ABI

  13. Studies of formation of silicides and their barrier heights to silicon

    Karl‐Ragnar Sundström, S. Petersson, P.A. Tove

    Статья1973Цитирований: 3
    ABI

  14. <i>Ab initio</i>study of the band structures of different phases of higher manganese silicides

    Д. Б. Мигас, В. Л. Шапошников, А. Б. Филонов +2

    Статья2008Цитирований: 2
    ABI

  15. On the growth of higher manganese silicide films on silicon

    Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2010Цитирований: 2
    ABI

  16. Formation and Schottky behavior of manganese silicides on <i>n</i>-type silicon

    M. Eizenberg, K. N. Tu

    Статья1982Цитирований: 2
    ABI

  17. Без названия

    ДругоеЦитирований: 1
    ABI

  18. Без названия

    ДругоеЦитирований: 1
    ABI

  19. Без названия

    ДругоеЦитирований: 1
    ABI

  20. Без названия

    ДругоеЦитирований: 1
    ABI

  21. Без названия

    ДругоеЦитирований: 1
    ABI