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A.M. Normamatov

Работ: 7

Karshi State University, Karshi, 180119, Uzbekistan

  1. Study of Mn4Si7 silicide crystals obtained by hot isostatic pressing and spark plasma sintering methods in an X-ray diffractometer

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +7

    СтатьяSemiconductor materials and interfacesJournal of Materials Science Materials in Engineering2025Цитирований: 4
    ABI

  2. Correlation between thickness-dependent morphology, phase structure, and vibrational properties of TiO2 thin films deposited via DC magnetron sputtering: A multi-technique characterization approach

    Б.Д. Игамов, I. R. Bekpulatov, A.M. Normamatov +2

    СтатьяZnO doping and propertiesNext Materials2025Цитирований: 0
    ABI

  3. Investigation of the formation mechanisms, crystallographic evolution and microstructural characteristics of the ZrSi2 phase on the Si(111) surface

    Б.Д. Игамов, I. R. Bekpulatov, A.I. Kamardin +4

    СтатьяSemiconductor materials and interfacesNext Materials2025Цитирований: 0
    ABI

  4. Comprehensive analysis of thickness-dependent structural, morphological, and optical properties of TiO2 based thin films

    B.D. Igamov, I.R. Bekpulatov, A.M. Normamatov +3

    СтатьяTiO2 Photocatalysis and Solar CellsResults in Optics2026Цитирований: 0
    ABI

  5. Study of polymer coatings implanted with high-energy ion beams

    B.D. Igamov, A.I. Kamardin, I.Yu Kochemasov +4

    СтатьяPolymer Nanocomposite Synthesis and IrradiationNext Materials2026Цитирований: 0
    ABI

  6. Microstructural, phase and electrophysical properties of TiSi2 alloy synthesized by Spark Plasma Sintering

    B.D. Igamov, I.R. Bekpulatov, A.M. Normamatov +3

    СтатьяSemiconductor materials and interfacesJournal of Alloys and Compounds2026Цитирований: 0
    ABI

  7. Study of the effect of thermal treatment OF Mn4Si7 and CoSi2 thin films using an infrared lamp in a high-temperature furnace in inert gas environments (Ar, Kr, Xe) On their crystal structure

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +5

    СтатьяSemiconductor materials and interfacesSolid State Sciences2026Цитирований: 0
    ABI