Статья

Diffusion of ytterbium in silicon

D. É. NazyrovUlugbek National University of Uzbekistan, Tashkent, 700174, Uzbekistan

Semiconductorsjournal2003en

ABI

Аннотация

Diffusion of ytterbium in silicon is studied by the direct method of radioactive isotopes in the temperature range of 1100–1250°C. Diffusion coefficients of ytterbium impurity in silicon are determined.

Темы

Graphite, nuclear technology, radiation studies Silicon and Solar Cell Technologies Nuclear reactor physics and engineering

Идентификаторы

DOI: 10.1134/1.1610112

Цитирования и источники

Цитирований: 0Использованных источников: 2

Показатели — AkademScholar · Скоро