The electrical and optical properties of InAs irradiated with electrons (∼2 MeV): The energy structure of intrinsic point defects
V. N. Brudnyı̆Kuznetsov Physicotechnical Institute at the Tomsk State University, pl. Revolyutsii 1, Tomsk, 634034, RussiaS. N. GrinyaevKuznetsov Physicotechnical Institute at the Tomsk State University, pl. Revolyutsii 1, Tomsk, 634034, RussiaN. G. KolinState Research Center at the Karpov Physicochemical Institute (Obninsk Branch), Obninsk, Kaluga oblast, 249033, Russia
ABI
Аннотация
The results of experimental studies of the electrical and optical properties of n-and p-InAs crystals irradiated with electrons at an energy of ∼2 MeV and doses as high as D = 1 × 1019 cm−2 are reported. Specific features of the annealing (at temperatures as high as 800°C) of radiation defects are also reported. The electronic structure of nonrelaxed V As, V In, AsIn, InAs defects is calculated. A relation between the electrical properties and the Fermi level position in irradiated InAs on the one hand and the electronic structure of the intrinsic defects and special features of the energy-band spectrum of InAs on the other hand is discussed.
Перевод пока недоступен
Темы
Идентификаторы
Цитирования и источники
Цитирований: 0Использованных источников: 16