V. N. Brudnyı̆

Работ: 8

V. D. Kuznetsov Siberian Physico-Technical Institute, Tomsk State University

Positron Annihilation and Electrical Properties of Electron-Irradiated (≈ 2 MeV) InAs Crystals
V. N. Brudnyı̆, S.A. Vorobiev, A. A. Tsoi
СтатьяMuon and positron interactions and applicationsphysica status solidi (a)1982Цитирований: 1
ABI
Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions
B. S. Azikov, V. N. Brudnyı̆, I. V. Kаmenskaya +1
СтатьяSemiconductor materials and interfacesRussian Physics Journal1981Цитирований: 0
ABI
Electrical and optical properties of electron-irradiated ZnGeP2
V. N. Brudnyı̆, V. A. Novikov, E. Popova
СтатьяChalcogenide Semiconductor Thin FilmsRussian Physics Journal1986Цитирований: 0
ABI
Electrical Properties and Positron Annihilation in Neutron-Irradiated n-InP
V. N. Brudnyı̆, V. A. Charchenko, N. G. Kolin +3
СтатьяSemiconductor materials and devicesphysica status solidi (a)1986Цитирований: 0
ABI
Positron Trapping at Point Defects in Electron-Irradiated GaAs
V. N. Brudnyı̆, A. D. Pogrebn Yak, Yu. P. Surov +1
СтатьяMuon and positron interactions and applicationsphysica status solidi (a)1989Цитирований: 0
ABI
Electrical properties of p-type ZnGeP2 irradiated by H+ ions
V. N. Brudnyı̆, V. A. Novikov
СтатьяSemiconductor materials and interfacesRussian Physics Journal1991Цитирований: 0
ABI
Radiation defects in semiconductors under hydrostatic pressure
V. N. Brudnyı̆
СтатьяRare-earth and actinide compoundsSemiconductors1999Цитирований: 0
ABI
The electrical and optical properties of InAs irradiated with electrons (∼2 MeV): The energy structure of intrinsic point defects
V. N. Brudnyı̆, S. N. Grinyaev, N. G. Kolin
СтатьяAdvanced Semiconductor Detectors and MaterialsSemiconductors2005Цитирований: 0
ABI