I. V. Kаmenskaya

Работ: 2

V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

1. Behavior of copper in gallium arsenide with high tin concentration

   I. V. Kаmenskaya, M. A. Krivov, E. V. Malisova +6

   СтатьяSemiconductor Quantum Structures and DevicesRussian Physics Journal1980Цитирований: 0

   ABIABI:AkademIndex/openalex/1980.article.000114

2. Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

   B. S. Azikov, V. N. Brudnyı̆, I. V. Kаmenskaya +1

   СтатьяSemiconductor materials and interfacesRussian Physics Journal1981Цитирований: 0

   ABIABI:AkademIndex/openalex/1981.article.000091