B. S. Azikov

Работ: 1

V. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, Tomsk

1. Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

   B. S. Azikov, V. N. Brudnyı̆, I. V. Kаmenskaya +1

   СтатьяSemiconductor materials and interfacesRussian Physics Journal1981Цитирований: 0

   ABIABI:AkademIndex/openalex/1981.article.000091