Статья

Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

B. S. AzikovV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskV. N. Brudnyı̆V. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskI. V. KаmenskayaV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskM. A. KrivovV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, Tomsk

Russian Physics Journaljournal1981en

ABI

Аннотация

Аннотация отсутствует.

Темы

Semiconductor materials and interfaces Ion-surface interactions and analysis Polymer Nanocomposite Synthesis and Irradiation

Идентификаторы

DOI: 10.1007/bf00894493

Цитирования и источники

Цитирований: 0Использованных источников: 6

Показатели — AkademScholar · Скоро