Статья

Behavior of copper in gallium arsenide with high tin concentration

I. V. KаmenskayaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskM. A. KrivovV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskE. V. MalisovaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk�. N. Mel'chenkoV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk,V.S. MorozovV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskМ. П. НикифороваV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskE. PopovaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskL. K. TarasovaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskS. S. KhludkovV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

Russian Physics Journaljournal1980en

ABI

Аннотация

Аннотация отсутствует.

Темы

Semiconductor Quantum Structures and Devices Quantum and electron transport phenomena Chalcogenide Semiconductor Thin Films

Идентификаторы

DOI: 10.1007/bf00892529

Цитирования и источники

Цитирований: 0Использованных источников: 4

Показатели — AkademScholar · Скоро